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SPring-8 Seminar (第318回)

主題/内容 Spatiotemporal Imaging of Lattice Strain in Microelectronic Devices at Beamline ID01/ESRF
開催期間 2025年09月19日 (金) 14時00分から15時00分まで
開催場所 中央管理棟1階_上坪記念講堂
主催 JASRI
形式 レクチャー(講演)
概要

Language:English

Speaker:Dr. Cedric Corley-Wiciak

Affiliation:European Synchrotron Radiation Facility

Title:Spatiotemporal Imaging of Lattice Strain in Microelectronic Devices at Beamline ID01/ESRF

Abstract:
C. Corley-Wiciak1,*, A.A. Corley-Wiciak 1, N.T. Sammler2, L. Seidler3, B. Butej2, L. Neumann4,
J. Tiscareño‐Ramírez5, P.A. Douissard1, S. J. Leake1, P. Boesecke1, D. Buca5, B. Witzigmann6,
M. Reisinger 2, G. Capellini 7,8, T.U. Schulli1

1 ESRF - European Synchrotron Radiation Facility, 38043 Grenoble, France
2 KAI GmbH, 9524, Villach, Austria
3 Institute of Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart, Germany
4 IKTS Fraunhofer, 01277 Dresden, Deutschland
5 Peter Grünberg Institute 9 (PGI 9) and JARA‐Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52425 Jülich, Germany
6 Lehrstuhl für Optoelektronik, Department EEI, Friedrich‐Alexander‐Universität, 91052 Erlangen‐Nürnberg, Germany
7 IHP – Leibniz‐Institut für innovative Mikroelektronik, 15236 Frankfurt(Oder), Germany
8 Dipartimento di Scienze, Universita Roma Tre, 00146 Roma, Italy

Static nanoscale mapping of lattice strain by synchrotron-based diffraction microscopy has been demonstrated with great success on many examples in the last decade [1,2]. Nowadays, the advent of high brightness synchrotron sources has sped up the acquisition of diffraction data from microscopic volumes [3] This improvement enables to advance from recording static images towards stroboscopic movies of strain in devices under operation [4], similar to the transition from stationary photography to moving film in the early 20th century. We demonstrate how this capability has been exploited at beamline ID01/ESRF [5], on several prominent examples from the field of microelectronics, visualizing localized heating in a GeSn/Ge-based µ-disk laser and the piezoelectric strain field during hard switching in a GaN/Si High Electron Mobility Transistor.

[1] C. Corley-Wiciak, et al. Small Methods. 8(12), 2400598, 2024
[2] E. Zatterin, et al. Physica Status Solidi (RRL) – Rapid Research Letters. 19(1), 2400241, 2025
[3] P. Cloetens, et al. Synchrotron Radiation News, 1-6, 2025
[4] T. Zhou, et al. Nature Communications. 16(1), 2822, 2025.
[5] S. J. Leake, et al. Journal of Synchrotron Radiation. 26(2), 571–584, 2019.

担当者:JASRI 回折・散乱推進室 隅谷和嗣
e-mail:sumitaniatspring8.or.jp/Phone:63495

問い合わせ先 JASRI研究支援部 総務調整課SPring-8セミナー事務局  糀畑美奈子


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最終変更日 2025-09-09 14:39