光子干渉Ｘ線吸収微細構造
Inquiry number
SOL-0000001541
Beamline
BL29XU (RIKEN Coherent X-ray Optics)
Scientific keywords
| A. Sample category | inorganic material |
|---|---|
| B. Sample category (detail) | metal, alloy, semiconductor, insulator, ceramics |
| C. Technique | absorption and its secondary process |
| D. Technique (detail) | XAFS |
| E. Particular condition | |
| F. Photon energy | X-ray (4-40 keV) |
| G. Target information | local structure |
Industrial keywords
| level 1---Application area | others |
|---|---|
| level 2---Target | |
| level 3---Target (detail) | |
| level 4---Obtainable information | interatomic distance, local structure |
| level 5---Technique | XAFS |
Classification
A80.12 semiconductor, A80.20 metal ・material, A80.30 inorganic material, A80.32 organic material, M40.10 XAFS
Body text
光子干渉Ｘ線吸収微細構造(XAFS)は、入射Ｘ線の干渉に起因してＸ線吸収スペクトル中にあらわれます。通常のXAFSとは異なり、吸収端をまたぎ広いエネルギー領域に存知します。原子間距離や配位数といった局所構造に関する情報が得られます。
図に示すのは、白金のL吸収端のはるか高エネルギー領域、および低エネルギー領域で観測されたXAFSです。
図 白金のL吸収端よりはるか高エネルギー領域でのXAFS
図 白金のL吸収端よりも低エネルギー領域でのXAFS
[ Y. Nishino, T. Ishikawa, M. Suzuki, N. Kawamura, P. Kappen, P. Korecki, N. Haack and G. Materlik, Physical Review B 66, 113103 (2002), Fig. 1, 2,
©2002 American Physical Society ]
Source of the figure
Original paper/Journal article
Journal title
Y. Nishino, T. Ishikawa, M. Suzuki, N. Kawamura, P. Kappen, P. Korecki, N. Haack, and G. Materlik, Phys. Rev. B 66, 113103 (2002)
Figure No.
1,2
Technique
透過法でＸ線吸収係数を測定します。
Source of the figure
No figure
Required time for experimental setup
1 hour(s)
Instruments
References
| Document name |
|---|
| Y. Nishino, T. Ishikawa, M. Suzuki, N. Kawamura, P. Kappen, P. Korecki, N. Haack, and G. Materlik, Phys. Rev. B 66, 113103 (2002) |
Related experimental techniques
Questionnaire
With user's own instruments.
Ease of measurement
Middle
Ease of analysis
With a great skill
How many shifts were needed for taking whole data in the figure?
Four-nine shifts