大型放射光施設 SPring-8

日   時 ： 平成16年11月12日　11:00-12:00

講演者 ： Nikolai Sokolov 博士
所   属 ： Ioffe Physico-Technical Institute of Russian Academy of Science, Russia

講演要旨
　　Recent research activities in the field of epitaxial fluoride nano- and heterostructures on silicon will be presented. The structures have been grown and studied in the group Epitaxial Insulators at Ioffe Physico-Technical Institute using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). X-ray diffraction and photoelectron spectroscopy studies have been carried out in close collaboration with a number of other research groups. The following topics will be discussed:

・ Initial stages of CaF₂ growth on Si(001) and formation of the interface [1,2]
・ Specific features of SrF₂ growth on Si(001)
・ Epitaxial stabilization of metastable phases in MnF₂ films on Si
・ Growth and properties of fluoride superlattices (CdF₂ - CaF₂, MnF₂ - CaF₂) [3-5]
・ Formation of Co and Ni epitaxial nanoislands and films on fluoride surfaces
・ Unsolved problems and prospects for future studies

References

[1] N.S. Sokolov, S.M. Suturin, V.P. Ulin, L. Pasquali, G. Selvaggi and S. Nannarone, Appl. Surf. Sci, 234 (2004) 480-486.
[2] L.Pasquali, S. D-Addato, G. Selvaggi, S. Nannarone, N.S.Sokolov, S.M.Suturin, H.Zogg, Nanotechnology 12 (2001) 403-408
[3] N.S.Sokolov, S.V.Gastev, A.Yu.Khilko, R.N.Kyutt, S.M.Suturin and M.V.Zamoryanskaya, J.Crystal Growth, 201/202 (1999) 1053-1056
[4] N.S.Sokolov, Y.Takeda, A.G.Banshchikov, J.Harada, K.Inaba, H.Ofuchi, M.Tabuchi, and N.L. Yakovlev, Appl. Surf. Sci., v.162-163 (2000) 469-473
[5] S. Kuroda, K. Marumoto, H. Kihara, H.Ofuchi, M.Tabuchi, Y.Takeda, A.G.Banshchikov, N.S.Sokolov, and N.L. Yakovlev, Jpn. J. Appl. Phys. Vol.40 (2001), Part 2, N 11A, L1151 - L1153